Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
879pF @ 25V
Power - Max
2.4W (Ta), 68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerTDFN
Supplier Device Package
PowerDI5060-8 (Type R)
Base Product Number
DMNH6035