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Part Number Overview
Manufacturer Part Number
SI4160DY-T1-GE3
Description
MOSFET N-CH 30V 25.4A 8SO
Detailed Description
N-Channel 30 V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
18 Weeks
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2071 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4160
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4160DY-T1-GE3TR
SI4160DY-T1-GE3-ND
SI4160DY-T1-GE3CT
SI4160DYT1GE3
SI4160DY-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4160DY-T1-GE3
Documents & Media
Datasheets
1(SI4160DY)
PCN Design/Specification
1(Mult Dev 07/Jun/2023)
PCN Assembly/Origin
1(New solder paste 26/May/2023)
HTML Datasheet
1(SI4160DY)
Quantity Price
Quantity: 12500
Unit Price: $0.48844
Packaging: Tape & Reel (TR)
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