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Part Number Overview
Manufacturer Part Number
R6076MNZ1C9
Description
MOSFET N-CHANNEL 600V 76A TO247
Detailed Description
N-Channel 600 V 76A (Tc) 740W (Tc) Through Hole TO-247
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
R6076MNZ1C9 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
740W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
R6076
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6076MNZ1C9
Documents & Media
Datasheets
1(R6076MNZ1)
Other Related Documents
()
Environmental Information
()
PCN Obsolescence/ EOL
1(R60YYY 05/Mar/2020)
EDA Models
1(R6076MNZ1C9 Models)
Quantity Price
-
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