Part Number Overview

Manufacturer Part Number
FDU7N60NZTU
Description
MOSFET N-CH 600V 5.5A IPAK
Detailed Description
N-Channel 600 V 5.5A (Tc) 90W (Tc) Through Hole IPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
5,040
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
UniFET-II™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.25Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
FDU7

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-FDU7N60NZTU-OS
ONSFSCFDU7N60NZTU

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDU7N60NZTU

Documents & Media

Datasheets
1(FDD7N60NZ, FDU7N60NZTU)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
()
HTML Datasheet
1(FDD7N60NZ, FDU7N60NZTU)

Quantity Price

-

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