China
Spain
Rusia
Italy
GermanyBUK965R4-40E,118
Part Number Overview
Manufacturer Part Number
BUK965R4-40E,118
Description
TRANSISTOR >30MHZ
Detailed Description
N-Channel 40 V 75A (Tc) 137W (Tc) Surface Mount D2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
442
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33.9 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
4483 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
137W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NEXNXPBUK965R4-40E,118
2156-BUK965R4-40E,118
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK965R4-40E,118
Documents & Media
Datasheets
1(BUK965R4-40E)
HTML Datasheet
1(BUK965R4-40E)
Quantity Price
Quantity: 442
Unit Price: $0.68
Packaging: Bulk
MinMultiplier: 442
Packaging: Bulk
MinMultiplier: 442
Substitutes
-