Part Number Overview

Manufacturer Part Number
FCP13N60N
Description
MOSFET N-CH 600V 13A TO220-3
Detailed Description
N-Channel 600 V 13A (Tc) 116W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FCP13N60N Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
SupreMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
258mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1765 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
116W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FCP13N60

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FCP13N60N-ND
FCP13N60NFS
2166-FCP13N60N-488

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP13N60N

Documents & Media

Datasheets
1(FCP13N60N, FCPF13N60NT)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Mar/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Asembly Chg 7/May/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(TO220B03 Pkg Drawing)
EDA Models
1(FCP13N60N Models)
Product Drawings
1(TO220B03 Pkg Drawing)

Quantity Price

-

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