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Part Number Overview
Manufacturer Part Number
FCHD125N65S3R0-F155
Description
MOSFET N-CH 650V 24A TO247
Detailed Description
N-Channel 650 V 24A (Tc) 181W (Tc) Through Hole TO-247-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
SuperFET® III
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1940 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
181W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
FCHD125
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FCHD125N65S3R0-F155OS
2156-FCHD125N65S3R0-F155
FCHD125N65S3R0-F155-ND
2832-FCHD125N65S3R0-F155
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCHD125N65S3R0-F155
Documents & Media
Datasheets
1(FCHD125N65S3R0)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Mar/2023)
HTML Datasheet
1(FCHD125N65S3R0)
Quantity Price
-
Substitutes
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