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Part Number Overview
Manufacturer Part Number
2SC3708S-AA
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 500 mA 120MHz 600 mW Through Hole 3-NP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,664
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 40mA, 400mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 50mA, 5V
Power - Max
600 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SC3708S-AA
ONSONS2SC3708S-AA
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3708S-AA
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 2664
Unit Price: $0.11
Packaging: Bulk
MinMultiplier: 2664
Packaging: Bulk
MinMultiplier: 2664
Substitutes
-