Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
9.7A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 1.7 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 µA @ 600 V
Capacitance @ Vr, F
100pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
10-PowerTQFN
Supplier Device Package
10-Power QFN (3.3x3.3)
Operating Temperature - Junction
-55°C ~ 160°C
Base Product Number
C3D1P7060