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Part Number Overview
Manufacturer Part Number
RFP10N12L
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 120 V 10A (Tc) 60W (Tc) Through Hole TO-220-3
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
259
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
300mOhm @ 5A, 5V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-RFP10N12L
HARHARRFP10N12L
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP10N12L
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 258
Unit Price: $1.16
Packaging: Bulk
MinMultiplier: 258
Packaging: Bulk
MinMultiplier: 258
Substitutes
-