Part Number Overview

Manufacturer Part Number
STP16N65M2
Description
MOSFET N-CH 650V 11A TO220
Detailed Description
N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
16 Weeks
Edacad Model
STP16N65M2 Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
718 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP16

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-497-15275-5
497-15275-5

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP16N65M2

Documents & Media

Datasheets
1(STx16N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
HTML Datasheet
1(STx16N65M2)
EDA Models
1(STP16N65M2 Models)

Quantity Price

Quantity: 1000
Unit Price: $1.09726
Packaging: Tube
MinMultiplier: 1000

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