China
Spain
Rusia
Italy
GermanyFDFS2P102
Part Number Overview
Manufacturer Part Number
FDFS2P102
Description
MOSFET P-CH 20V 3.3A 8SOIC
Detailed Description
P-Channel 20 V 3.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FDFS2P102 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
FDFS2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
FDFS2P102_NLCT-ND
FDFS2P102_NLCT
FDFS2P102_NLTR-ND
FDFS2P102TR-NDR
FDFS2P102_NLTR
FDFS2P102CT
FDFS2P102CT-NDR
FDFS2P102_NL
FDFS2P102TR
FDFS2P102DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDFS2P102
Documents & Media
Datasheets
1(FDFS2P102)
Environmental Information
()
HTML Datasheet
1(FDFS2P102)
EDA Models
1(FDFS2P102 Models)
Quantity Price
-
Substitutes
-