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Part Number Overview
Manufacturer Part Number
PSMN1R6-30PL,127
Description
MOSFET N-CH 30V 100A TO220AB
Detailed Description
N-Channel 30 V 100A (Tc) 306W (Tc) Through Hole TO-220AB
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
212 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12493 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
568-4900-5
934063916127
568-4900-5-ND
1727-4269
2156-PSMN1R6-30PL,127-1727
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN1R6-30PL,127
Documents & Media
Datasheets
1(PSMN1R6-30PL)
Featured Product
1(TO220 with Trench 6 MOSFETs)
PCN Design/Specification
1(Logo Marking Update 30/Nov/2016)
PCN Packaging
()
HTML Datasheet
1(PSMN1R6-30PL)
Quantity Price
-
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