China
Spain
Rusia
Italy
GermanyMJ11028G
Part Number Overview
Manufacturer Part Number
MJ11028G
Description
HIGH-CURRENT NPN SILICON POWER T
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3)
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
23
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 25A, 5V
Power - Max
300 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AE
Supplier Device Package
TO-204 (TO-3)
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSONSMJ11028G
2156-MJ11028G
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo MJ11028G
Documents & Media
Datasheets
1(MJ11028G Datasheet)
Quantity Price
Quantity: 23
Unit Price: $13.15
Packaging: Bulk
MinMultiplier: 23
Packaging: Bulk
MinMultiplier: 23
Substitutes
-