IPB049N06L3GATMA1

Part Number Overview

Manufacturer Part Number

IPB049N06L3GATMA1

Description

MOSFET N-CH 60V 80A D2PAK

Detailed Description

N-Channel 60 V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-3

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

1,000

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

OptiMOS™

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 58µA

Gate Charge (Qg) (Max) @ Vgs

50 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8400 pF @ 30 V

FET Feature

-

Power Dissipation (Max)

115W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Base Product Number

IPB049N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

IPB049N06L3 GCT-ND

IPB049N06L3 GDKR

SP000453056

IPB049N06L3 GTR-ND

IPB049N06L3 G

IPB049N06L3 G-ND

IPB049N06L3GATMA1TR

IPB049N06L3G

IPB049N06L3GATMA1DKR

IPB049N06L3GATMA1CT

IPB049N06L3 GDKR-ND

IPB049N06L3 GCT

Documents & Media

Datasheets

1(IPx049,52N06L3 G)

Quantity Price

-

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IPB049N06L3GATMA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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