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Part Number Overview
Manufacturer Part Number
IPD50R1K4CEBTMA1
Description
MOSFET N-CH 500V 3.1A TO252-3
Detailed Description
N-Channel 500 V 3.1A (Tc) 25W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
178 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD50R1K4CECT
IPD50R1K4CETR
IPD50R1K4CETR-ND
IPD50R1K4CECT-ND
IPD50R1K4CEDKR-ND
IPD50R1K4CEBTMA1CT
IPD50R1K4CEBTMA1DKR
INFINFIPD50R1K4CEBTMA1
IPD50R1K4CEDKR
2156-IPD50R1K4CEBTMA1-ITTR
IPD50R1K4CEBTMA1TR
SP000992072
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R1K4CEBTMA1
Documents & Media
Datasheets
1(IPx50R1K4CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx50R1K4CE)
Quantity Price
-
Substitutes
Part No. : IPD50R1K4CEAUMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 4,935
Unit Price. : $0.62000
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Substitute Type. : Direct
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Manufacturer. : Renesas Electronics Corporation
Quantity Available. : 6,000
Unit Price. : $0.99942
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Quantity Available. : 6,000
Unit Price. : $0.99942
Substitute Type. : Similar