Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Base Product Number
SI7900