China
Spain
Rusia
Italy
GermanyTPH3208PS
Part Number Overview
Manufacturer Part Number
TPH3208PS
Description
GANFET N-CH 650V 20A TO220AB
Detailed Description
N-Channel 650 V 20A (Tc) 96W (Tc) Through Hole TO-220AB
Manufacturer
Transphorm
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
TPH3208
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TPH3208PS
Documents & Media
Datasheets
1(TPH3208PS)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
1(TPH32/TPH32 02/Mar/2021)
HTML Datasheet
1(TPH3208PS)
Simulation Models
1(TPH3208LD Spice Model)
Quantity Price
-
Substitutes
-