Part Number Overview

Manufacturer Part Number
SPD02N60C3BTMA1
Description
MOSFET N-CH 650V 1.8A TO252-3
Detailed Description
N-Channel 650 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
-
Base Product Number
SPD02N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SPD02N60C3INTR-NDR
SP000077610
SPD02N60C3INCT-ND
SPD02N60C3T
SPD02N60C3INCT-NDR
SPD02N60C3BTMA1TR
SPD02N60C3
SPD02N60C3INCT
SPD02N60C3T-ND
SP000013693
SPD02N60C3ZT
SPD02N60C3INTR
SPD02N60C3INTR-ND
SPD02N60C3BTMA1CT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD02N60C3BTMA1

Documents & Media

Datasheets
1(SP(D,U)02N60C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(SP(D,U)02N60C3)

Quantity Price

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