Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.9A, 4.2A
Rds On (Max) @ Id, Vgs
27mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
677pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package
SuperSOT™-6 FLMP
Base Product Number
FDC6020