Part Number Overview

Manufacturer Part Number
IXTY1R4N60P
Description
MOSFET N-CH 600V 1.4A TO252
Detailed Description
N-Channel 600 V 1.4A (Tc) 50W (Tc) Surface Mount TO-252AA
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
PolarHV™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IXTY1

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTY1R4N60P

Documents & Media

Datasheets
()
PCN Obsolescence/ EOL
1(Mult Devices OBS 02/Mar/2018)
HTML Datasheet
1(IXT(P,U,Y)1R4N60P)

Quantity Price

-

Substitutes

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