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Part Number Overview
Manufacturer Part Number
STB11NM60FDT4
Description
MOSFET N-CH 600V 11A D2PAK
Detailed Description
N-Channel 600 V 11A (Tc) 160W (Tc) Surface Mount D2PAK
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
FDmesh™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB11
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-3511-1-NDR
497-3511-6-NDR
497-3511-1
497-3511-2
497-3511-2-NDR
497-3511-6
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB11NM60FDT4
Documents & Media
Other Related Documents
1(STB11NK40Z View All Specifications)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Design/Specification
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Quantity Price
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