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Part Number Overview
Manufacturer Part Number
IRL510S
Description
MOSFET N-CH 100V 5.6A D2PAK
Detailed Description
N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
540mOhm @ 3.4A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 43W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRL510
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRL510S
Documents & Media
Datasheets
1(IRL510S, SiHL510S)
HTML Datasheet
1(IRL510S, SiHL510S)
Product Drawings
()
Quantity Price
-
Substitutes
-