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Part Number Overview
Manufacturer Part Number
IRL3713PBF
Description
MOSFET N-CH 30V 260A TO220AB
Detailed Description
N-Channel 30 V 260A (Tc) 330W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5890 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
64-0082PBF
SP001567066
IFEINFIRL3713PBF
*IRL3713PBF
2156-IRL3713PBFINF
64-0082PBF-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3713PBF
Documents & Media
Datasheets
1(IRL3713PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRL3713PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3713PbF)
Simulation Models
1(IRL3713PBF Spice Model)
Quantity Price
-
Substitutes
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