China
Spain
Rusia
Italy
GermanyIRF5800TRPBF
Part Number Overview
Manufacturer Part Number
IRF5800TRPBF
Description
MOSFET P-CH 30V 4A MICRO6
Detailed Description
P-Channel 30 V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF5800TRPBF-ND
SP001571274
IRF5800TRPBFTR
IRF5800TRPBFDKR
IRF5800TRPBFCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF5800TRPBF
Documents & Media
Datasheets
1(IRF5800PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Quantity Price
-
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