Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 48A, 10V
Vgs(th) (Max) @ Id
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3199 pF @ 25 V
Power Dissipation (Max)
40.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack