Part Number Overview

Manufacturer Part Number
RSD200N10TL
Description
MOSFET N-CH 100V 20A CPT3
Detailed Description
N-Channel 100 V 20A (Ta) 20W (Tc) Surface Mount CPT3
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
RSD200

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

RSD200N10TLTR
RSD200N10TLCT
RSD200N10TLDKR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RSD200N10TL

Documents & Media

Datasheets
1(RSD200N10 ~)
Featured Product
1(MOSFET ECOMOS)
HTML Datasheet
1(RSD200N10 ~)
Product Drawings
1(CPT-3, D-PAK Series)

Quantity Price

-

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