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Part Number Overview
Manufacturer Part Number
TK16J60W,S1VE
Description
X35 PB-F POWER MOSFET TRANSISTOR
Detailed Description
N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
16 Weeks
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK16J60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK16J60W,S1VE(S
264-TK16J60WS1VE
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK16J60W,S1VE
Documents & Media
Datasheets
1(TK16J60W)
Featured Product
1(Server Solutions)
Quantity Price
Quantity: 2000
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MinMultiplier: 1
Substitutes
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