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Part Number Overview
Manufacturer Part Number
NTD4969NT4G
Description
MOSFET N-CH 30V 9.4A/41A DPAK
Detailed Description
N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Surface Mount DPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
837 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.38W (Ta), 26.3W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
-
Base Product Number
NTD4969
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSNTD4969NT4G
NTD4969NT4G-ND
NTD4969NT4GOSTR
2832-NTD4969NT4GTR
NTD4969NT4GOSDKR
2156-NTD4969NT4G-OS
NTD4969NT4GOSCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4969NT4G
Documents & Media
Datasheets
1(NTD4969N)
Environmental Information
()
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NTD4969N)
Quantity Price
-
Substitutes
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