Part Number Overview

Manufacturer Part Number
FF3MR12KM1HOSA1
Description
SIC 2N-CH 1200V 375A AG-62MM
Detailed Description
Mosfet Array 1200V (1.2kV) 375A (Tc) Chassis Mount AG-62MM
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
FF3MR12KM1HOSA1 Models
Standard Package
10
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
375A (Tc)
Rds On (Max) @ Id, Vgs
2.83mOhm @ 375A, 15V
Vgs(th) (Max) @ Id
5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs
1000nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
29800pF @ 25V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MM
Base Product Number
FF3MR12

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

448-FF3MR12KM1HOSA1
2156-FF3MR12KM1HOSA1
SP001686348

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF3MR12KM1HOSA1

Documents & Media

Datasheets
1(FF3MR12KM1H)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFETs and Diodes)
EDA Models
1(FF3MR12KM1HOSA1 Models)

Quantity Price

-

Substitutes

Part No. : FF2MR12KM1H
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : MFR Recommended