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Part Number Overview
Manufacturer Part Number
SPB35N10 G
Description
MOSFET N-CH 100V 35A TO263-3
Detailed Description
N-Channel 100 V 35A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB35N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000102172
SPB35N10GXT
SPB35N10 G-ND
SPB35N10G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB35N10 G
Documents & Media
Datasheets
1(SP(I,P,B)35N10)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SP(I,P,B)35N10)
Quantity Price
-
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