China
Spain
Rusia
Italy
GermanyIXYN120N65B3D1
Part Number Overview
Manufacturer Part Number
IXYN120N65B3D1
Description
IGBT MODULE DISC IGBT SOT-227UI
Detailed Description
IGBT PT 650 V 250 A 830 W Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
GenX3™, XPT™
Package
Tube
Product Status
Obsolete
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
250 A
Current - Collector Pulsed (Icm)
770 A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 100A
Power - Max
830 W
Switching Energy
1.34mJ (on), 1.5mJ (off)
Input Type
Standard
Gate Charge
250 nC
Td (on/off) @ 25°C
30ns/168ns
Test Condition
400V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr)
28 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Base Product Number
IXYN120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXYN120N65B3D1
Documents & Media
Datasheets
1(IXYN120N65B3D1)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Dev obs 15/Feb/2023)
Quantity Price
-
Substitutes
-