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Part Number Overview
Manufacturer Part Number
TK1K9A60F,S4X
Description
MOSFET N-CH 600V 3.7A TO220SIS
Detailed Description
N-Channel 600 V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIX
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK1K9A60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK1K9A60FS4X(S
TK1K9A60F,S4X(S
TK1K9A60FS4X
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK1K9A60F,S4X
Documents & Media
Datasheets
1(TK1K9A60F)
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