China
Spain
Rusia
Italy
GermanyIRFR3706TRPBF
Part Number Overview
Manufacturer Part Number
IRFR3706TRPBF
Description
MOSFET N-CH 20V 75A DPAK
Detailed Description
N-Channel 20 V 75A (Tc) 88W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFR3706TRPBF
IRFR3706TRPBFTR-ND
IRFR3706PBFDKR
IRFR3706PBFCT
SP001564918
IRFR3706TRPBF-ND
IRFR3706PBFTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR3706TRPBF
Documents & Media
Datasheets
1(IRF(R,U)3706PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF(R,U)3706PbF)
Quantity Price
-
Substitutes
-