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Part Number Overview
Manufacturer Part Number
RN1412TE85LF
Description
TRANS PREBIAS NPN 50V 0.1A SMINI
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini
Base Product Number
RN1412
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN1412TE85LFTR
RN1412TE85LFDKR
RN1412(TE85L,F)
RN1412TE85LFCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1412TE85LF
Documents & Media
Datasheets
1(RN14(12,13))
Quantity Price
Quantity: 1000
Unit Price: $0.05836
Packaging: Cut Tape (CT)
MinMultiplier: 1
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Packaging: Cut Tape (CT)
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MinMultiplier: 1
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Quantity: 1
Unit Price: $0.3
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
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