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Part Number Overview
Manufacturer Part Number
IPP60R299CPXKSA1
Description
MOSFET N-CH 650V 11A TO220-3
Detailed Description
N-Channel 650 V 11A (Tc) 96W (Tc) Through Hole PG-TO220-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R299
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPP60R299CP
448-IPP60R299CPXKSA1
IPP60R299CPX
SP000084280
IPP60R299CPAKSA1
IPP60R299CPIN-NDR
IPP60R299CPXK
IPP60R299CPXKSA1-ND
IPP60R299CPXTIN-ND
IPP60R299CPXTIN
IPP60R299CPIN
IPP60R299CPIN-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP60R299CPXKSA1
Documents & Media
Datasheets
1(IPP60R299CP)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPP60R299CP)
Simulation Models
1(CoolMOS™ Power MOSFET 600V CP Spice Model)
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