Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
14A, 16A
Rds On (Max) @ Id, Vgs
9.2mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
810pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Supplier Device Package
8-DFN (5x6)
Base Product Number
RJK0222