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Part Number Overview
Manufacturer Part Number
IPD122N10N3GBTMA1
Description
MOSFET N-CH 100V 59A TO252-3
Detailed Description
N-Channel 100 V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD122N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000485966
IPD122N10N3GBTMA1DKR
IPD122N10N3GBTMA1CT
2156-IPD122N10N3GBTMA1-ITTR-ND
IPD122N10N3 GTR-ND
IPD122N10N3 GDKR
INFINFIPD122N10N3GBTMA1
IPD122N10N3 GCT-ND
IPD122N10N3GXT
2156-IPD122N10N3GBTMA1
IPD122N10N3GBTMA1TR
IPD122N10N3 G
IPD122N10N3G
IPD122N10N3 G-ND
IPD122N10N3 GDKR-ND
IPD122N10N3 GCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD122N10N3GBTMA1
Documents & Media
Datasheets
1(IPD122N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD122N10N3 G)
Quantity Price
-
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