Part Number Overview

Manufacturer Part Number
TSM8N80CI C0G
Description
MOSFET N-CH 800V 8A ITO220AB
Detailed Description
N-Channel 800 V 8A (Tc) 40.3W (Tc) Through Hole ITO-220AB
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks

Technical specifications

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1921 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
TSM8N80

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-2068-TSM8N80CIC0GDKR
-2068-TSM8N80CIC0G
TSM8N80CI C0G-ND
TSM8N80CIC0G
-2068-TSM8N80CIC0GDKR-ND
-2068-TSM8N80CIC0GDKRINACTIVE

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM8N80CI C0G

Documents & Media

Datasheets
1(TSM8N80)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM8N80)

Quantity Price

Quantity: 500
Unit Price: $1.62538
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $1.8285
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $2.26
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $2.69
Packaging: Tube
MinMultiplier: 1

Substitutes

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