Part Number Overview

Manufacturer Part Number
APT11N80BC3G
Description
MOSFET N-CH 800V 11A TO247
Detailed Description
N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole TO-247 [B]
Manufacturer
Microchip Technology
Standard LeadTime
38 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 [B]
Package / Case
TO-247-3
Base Product Number
APT11N80

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

APT11N80BC3GMI
APT11N80BC3GMI-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT11N80BC3G

Documents & Media

Datasheets
1(High-Voltage Power Discretes and Modules)
Environmental Information
()
HTML Datasheet
1(Power Products Catalog)
Product Drawings
1(TO-247 Front)

Quantity Price

Quantity: 100
Unit Price: $3.65
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $4.47
Packaging: Tube
MinMultiplier: 1

Substitutes

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