Mfr
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
50A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Capacitance @ Vr, F
660pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GC10MPS12