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Part Number Overview
Manufacturer Part Number
IPC26N12NX1SA1
Description
MOSFET N-CH 120V 1A SAWN ON FOIL
Detailed Description
N-Channel 120 V 1A (Tj) Surface Mount Sawn on foil
Manufacturer
Infineon Technologies
Standard LeadTime
28 Weeks
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 244µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Base Product Number
IPC26N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPC26N12NX1SA1
SP000296743
IPC26N12NX1SA1-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPC26N12NX1SA1
Documents & Media
Datasheets
1(IPC26N12N)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPC26N12N)
Quantity Price
Quantity: 5145
Unit Price: $3.17812
Packaging: Bulk
MinMultiplier: 5145
Packaging: Bulk
MinMultiplier: 5145
Substitutes
-