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Part Number Overview
Manufacturer Part Number
NTMSD3P102R2SG
Description
MOSFET P-CH 20V 2.34A 8SOIC
Detailed Description
P-Channel 20 V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NTMSD3P102R2SG Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
FETKY™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 16 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
730mW (Ta)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMSD3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
ONSONSNTMSD3P102R2SG
2156-NTMSD3P102R2SG-ONTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMSD3P102R2SG
Documents & Media
Datasheets
1(NTMSD3P102R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 17/Apr/2015)
PCN Design/Specification
1(Copper Wire 12/May/2009)
HTML Datasheet
1(NTMSD3P102R2)
EDA Models
1(NTMSD3P102R2SG Models)
Quantity Price
-
Substitutes
-