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Part Number Overview
Manufacturer Part Number
TK58E06N1,S1X
Description
MOSFET N-CH 60V 58A TO220
Detailed Description
N-Channel 60 V 58A (Ta) 110W (Tc) Through Hole TO-220
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
TK58E06N1,S1X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVIII-H
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
58A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK58E06
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK58E06N1,S1X(S
TK58E06N1S1X
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK58E06N1,S1X
Documents & Media
Datasheets
1(TK58E06N1)
Featured Product
()
EDA Models
1(TK58E06N1,S1X Models)
Quantity Price
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Substitutes
Part No. : FDP047N08
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