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Part Number Overview
Manufacturer Part Number
IRFH5110TRPBF
Description
MOSFET N-CH 100V 11A/63A 8PQFN
Detailed Description
N-Channel 100 V 11A (Ta), 63A (Tc) 3.6W (Ta), 114W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3152 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Base Product Number
IRFH5110
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IRFH5110TRPBFTR
448-IRFH5110TRPBFCT
448-IRFH5110TRPBFDKR
IRFH5110TRPBF-ND
SP001560340
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5110TRPBF
Documents & Media
Datasheets
1(IRFH5110PBF)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
Simulation Models
1(IRFH5110TR2PBF Saber Model)
Quantity Price
-
Substitutes
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