China
Spain
Rusia
Italy
Germany2SB1167T
Part Number Overview
Manufacturer Part Number
2SB1167T
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1.2 W Through Hole TO-126LP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
951
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
1.2 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126LP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SB1167T
ONSONS2SB1167T
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1167T
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 951
Unit Price: $0.32
Packaging: Bulk
MinMultiplier: 951
Packaging: Bulk
MinMultiplier: 951
Substitutes
-