Part Number Overview

Manufacturer Part Number
IPW65R045C7300XKSA1
Description
MOSFET N-CH 650V 46A TO247
Detailed Description
N-Channel 650 V 46A (Tc) 227W (Tc) Through Hole PG-TO247-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
240
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW65R045C7300XKSA1

Documents & Media

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Quantity Price

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Substitutes

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