China
Spain
Rusia
Italy
GermanyMSCMC120AM03CT6LIAG
Part Number Overview
Manufacturer Part Number
MSCMC120AM03CT6LIAG
Description
SIC 2N-CH 1200V 631A SP6C LI
Detailed Description
Mosfet Array 1200V (1.2kV) 631A (Tc) 2778W (Tc) Chassis Mount SP6C LI
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
631A (Tc)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 500A, 20V
Vgs(th) (Max) @ Id
4V @ 150mA
Gate Charge (Qg) (Max) @ Vgs
1610nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
27900pF @ 1000V
Power - Max
2778W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP6C LI
Base Product Number
MSCMC120
Environmental & Export Classifications
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCMC120AM03CT6LIAG
Documents & Media
Datasheets
1(MSCMC120AM03CT6LIAG)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Assembly/Origin
1(Assembly Site 15/Sep/2023)
Quantity Price
-
Substitutes
-