Part Number Overview

Manufacturer Part Number
FQB7P20TM
Description
MOSFET P-CH 200V 7.3A D2PAK
Detailed Description
P-Channel 200 V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQB7P20TM Models
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
690mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB7P20

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FQB7P20TMDKR
FQB7P20TMCT
FAIFSCFQB7P20TM
FQB7P20TM-ND
2156-FQB7P20TM-OS
FQB7P20TMTR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB7P20TM

Documents & Media

Datasheets
1(FQB7P20TM Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Multiple Parts 23/Jun/2022)
PCN Packaging
()
EDA Models
1(FQB7P20TM Models)

Quantity Price

-

Substitutes

Part No. : IRF5210STRLPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 2,963
Unit Price. : $2.93000
Substitute Type. : Similar
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Manufacturer. : Vishay Siliconix
Quantity Available. : 4,025
Unit Price. : $2.80000
Substitute Type. : Similar