China
Spain
Rusia
Italy
Germany2SD1312(0)-T-AZ
Part Number Overview
Manufacturer Part Number
2SD1312(0)-T-AZ
Description
SMALL SIGNAL BIPOLAR TRANSTR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1 A 120MHz 1 W Through Hole
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
649
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
135 @ 200mA, 1V
Power - Max
1 W
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
-
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SD1312(0)-T-AZ
RENRNS2SD1312(0)-T-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD1312(0)-T-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 649
Unit Price: $0.46
Packaging: Bulk
MinMultiplier: 649
Packaging: Bulk
MinMultiplier: 649
Substitutes
-